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High Hardness 4Inch Sapphire Wafer For Leds Laser Diodes Optoelectronics

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High Hardness 4Inch Sapphire Wafer For Leds Laser Diodes Optoelectronics

Name: High Hardness 4Inch Sapphire Wafer For Leds Laser Diodes Optoelectronics
Brand: ZMSH
Price: 1 USD

Cheap High Hardness 4Inch Sapphire Wafer For Leds Laser Diodes Optoelectronics wholesale

Brand Name : ZMSH

Model Number : 4INCH*0.5mmt

Certification : ROHS

Place of Origin : China

MOQ : 25pcs

Price : by case

Payment Terms : T/T, Western Union, MoneyGram

Supply Ability : 1000pcs per month

Delivery Time : 1 weeks

Packaging Details : in 25pcs cassette wafer box under 100grade cleaning room

material : sapphire single crystal Al2O3 99.999%

orientation : C-AXIS/A-AXIS/M-AXIS/M-AXIS

surface : SSP DSP or Grinding

thickness : 0.25mm, 0.5mm or 0.43mm

application : led or optical glass

growth method : ky

SIZE : 4inch DIA100mm

Package : 25/Cassette

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4inch 101.6mm Sapphire Wafer Substrate Carrier Single Side Polished Single Crystal Al2O3

Application of 4inch sapphire wafer substrates

4-inch sapphire wafer is widely used in LED, laser diode, optoelectronic devices, semiconductor devices, and other fields. The high light transmittance and high hardness of sapphire wafers make them ideal substrate materials for manufacturing high-brightness and high-power LEDs. In addition, sapphire wafers can also be used to manufacture optical Windows, mechanical components, and so on.

Sapphire Properties

Physical
Chemical formula	Al₂O₃
Density	3.97 g/cm³
Hardness	9 Mohs
Melting point	2050^oC
Max. use temperature	1800-1900^oC
Mechanical
Tensile strength	250-400 MPa
Compressive strength	2000 MPa
Poisson's ratio	0.25-0.30
Young's Modulus	350-400 GPa
Bending strength	450-860 MPa
Rapture Modulus	350-690 MPa
Thermal
Linear expansion rate (at 293-323 K)	5.0*10^-6K^-1(⊥ C)
Linear expansion rate (at 293-323 K)	6.6*10^-6K^-1(∥ C)
Thermal conductivity (at 298 K)	30.3 W/(m*K)(⊥ C)
Thermal conductivity (at 298 K)	32.5 W/(m*K)(∥ C)
Specific heat (at 298 K)	0.10 cal*g^-1
Electrical
Resistivity (at 298 K)	5.010¹⁸ Ωcm(⊥ C)
Resistivity (at 298 K)	1.3-2.910¹⁹ Ωcm(∥ C)
Dielectric constant (at 298 K, in 10³-10⁹ Hz interval)	9.3 (⊥ C)
Dielectric constant (at 298 K, in 10³-10⁹ Hz interval)	11.5 (∥ C)

Production process:

The production process for sapphire wafers usually includes the following steps:

Sapphire single crystal material with high purity is selected.
Cut sapphire single crystal material into crystals of appropriate size.
The crystal is processed into wafer shape by high temperature and pressure.
Precision grinding and polishing is performed many times to obtain high quality surface finish and flatness

High Hardness 4Inch Sapphire Wafer For Leds Laser Diodes Optoelectronics

Specifications of 4inch sapphire wafer substrate carrier

Specs	2 inch	4 inch	6 inch	8inch
Dia	50.8 ± 0.1 mm	100 ± 0.1 mm	150 ± 0.1 mm	200 ± 0.1 mm
Thick	430 ± 25 um	650 ± 25 um	1300 ± 25 um	1300 ± 25 um
Ra	Ra ≤ 0.3 nm	Ra ≤ 0.3nm	Ra ≤ 0.3nm	Ra ≤ 0.3 nm
TTV	≤ 10um	≤ 10um	≤ 10um	≤ 10um
Tolerance	≤ 3 um	≤ 3 um	≤ 3 um	≤ 3 um
Quality surface	20/10	20/10	20/10	20/10
Surface state	DSP SSP Grinding
Shape	Circle with notch or flatness
Chamfer	45°,C Shape
Material	Al2O3 99.999%
N/O	Sapphire wafer

The material is grown and orientated, and substrates are fabricated and polished to an extremely smooth damage free Epi-Ready surface on one or both sides of the wafer. A variety of wafer orientations and sizes up to 6" in diameter are available.

A-Plane sapphire substrates - are usually used for hybrid microelectronic applications requiring a uniform dielectric constant and highly insulating characteristics.

C-Plane substrates - tend to be used for all-V and ll-Vl compounds, such as GaN, for bright blue and green LED and laser diodes.

R-Plane substrates - these are preferred for the hetero-epitaxial deposition of silicon used in microelectronic IC applications.

Standard wafer 2 inch C-plane sapphire wafer SSP/DSP 3 inch C-plane sapphire wafer SSP/DSP 4 inch C-plane sapphire wafer SSP/DSP 6 inch C-plane sapphire wafer SSP/DSP	Special Cut A-plane (1120) sapphire wafer R-plane (1102) sapphire wafer M-plane (1010) sapphire wafer N-plane (1123) sapphire wafer C-axis with a 0.5°~ 4° offcut, toward A-axis or M-axis Other customized orientation
Customized Size 1010mm sapphire wafer 2020mm sapphire wafer Ultra thin (100um) sapphire wafer 8 inch sapphire wafer	Patterned Sapphire Substrate (PSS) 2 inch C-plane PSS 4 inch C-plane PSS

2inch

DSP C-AXIS 0.1mm/0.175mm/0.2mm/0.3mm/0.4mm

/0.5mm/ 1.0mmt

SSP C-axis 0.2/0.43mm

(DSP＆SSP) A-axis/M-axis/R-axis 0.43mm

3inch

DSP/ SSP C-axis 0.43mm/0.5mm

4Inch

dsp c-axis 0.4mm/ 0.5mm/1.0mm

ssp c-axis 0.5mm/0.65mm/1.0mmt

6inch

ssp c-axis 1.0mm/1.3mmm

dsp c-axis 0.65mm/ 0.8mm/1.0mmt

101.6mm 4inch Sapphire wafer sapphire Details

High Hardness 4Inch Sapphire Wafer For Leds Laser Diodes Optoelectronics